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CS2N60FA9H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Power MOSFET - Huajing Microelectronics

भाग संख्या CS2N60FA9H
समारोह Silicon N-Channel Power MOSFET
मैन्युफैक्चरर्स Huajing Microelectronics 
लोगो Huajing Microelectronics लोगो 
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CS2N60FA9H pdf
CS2N60F A9H
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 600V, VGS= 0V,
Ta = 25
VDS =480V, VGS= 0V,
Ta = 125
VGS= 30V
VGS =-30V
ON Characteristics
Symbol
Parameter
Test Conditions
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp380µs,δ≤2%
VGS=10V,ID=1.0A
VDS = VGS, ID = 250µA
Rating
Units
Min. Typ. Max.
600 -- -- V
-- 0.6 -- V/
-- -- 1
µA
100
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 3.6 4.5
2.0 4.0
Units
V
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =1.0A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =2.0A VDD = 300V
VGS = 10V RG = 9.1
ID =2.0A VDD =300V
VGS = 10V
Rating
Min. Typ. Max.
1.8 --
-- 280
-- 31
-- 5.4
Units
S
pF
Rating
Min. Typ. Max.
-- 7 --
-- 5 --
-- 26 --
-- 10.5 --
-- 8.5
-- 1.5
-- 4.0
Units
ns
nC
W U X I C H I N A R ES O U R C ES H U A J I N G M I C R O EL EC TR O N I C S C O . , LTD . P a g e 2 of 1 0 2 0 1 5 V0 1

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