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CS1N65B3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Power MOSFET - Huajing Microelectronics

भाग संख्या CS1N65B3
समारोह Silicon N-Channel Power MOSFET
मैन्युफैक्चरर्स Huajing Microelectronics 
लोगो Huajing Microelectronics लोगो 
पूर्व दर्शन
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<?=CS1N65B3?> डेटा पत्रक पीडीएफ

CS1N65B3 pdf
CS1N65 B3
R
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp380µs,δ≤2%
Test Conditions
VGS=10V,ID=0.75A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Trans conductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VDS=30V, ID =0.75A
VGS = 0V VDS = 25V
f = 1.0MHz
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
ID =1.5A VDD = 325V
VGS = 10V RG = 4.7
ID =1.5A VDD =325V
VGS = 10V
Rating
Min. Typ. Max.
650 -- --
-- 0.55 --
-- -- 1
-- -- 100
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 8.5 9.5
2.0 4.0
Units
V
Rating
Min. Typ. Max.
-- 1.0 --
-- 139 --
-- 17 --
-- 2 --
Units
S
pF
Rating
Min. Typ. Max.
-- 6 --
-- 4.5 --
-- 27 --
-- 16 --
-- 5.3
-- 0.7
-- 2.6
Units
ns
nC
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2015V01

विन्यास 10 पेज
डाउनलोड[ CS1N65B3 Datasheet.PDF ]


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