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CS8N80A8D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Power MOSFET - Huajing Microelectronics

भाग संख्या CS8N80A8D
समारोह Silicon N-Channel Power MOSFET
मैन्युफैक्चरर्स Huajing Microelectronics 
लोगो Huajing Microelectronics लोगो 
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CS8N80A8D pdf
CS8N80 A8D
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 800V, VGS= 0V,
Ta = 25
VDS =640V, VGS= 0V,
Ta = 125
VGS =+20V
VGS =-20V
Rating
Min. Typ. Max.
800 -- --
-- 0.85 --
-- -- 25
-- -- 250
Units
V
V/
µA
-- -- 10 µA
-- -- -10 µA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VGS=10V,ID=4.0A
VDS = VGS, ID = 250µA
Test Conditions
VDS=15V, ID =4.0A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =8.0A VDD = 400V
VGS = 10V RG = 25
ID =8.0A VDD =400V
VGS = 10V
Rating
Min. Typ. Max.
-- 1.0 1.25
2.0 4.0
Units
V
Rating
Min. Typ. Max.
-- 8.5 --
-- 2150 --
-- 164 --
-- 14 --
Units
S
pF
Rating
Min. Typ. Max.
-- 26 --
-- 40 --
-- 140 --
-- 68 --
-- 49
-- 8.5 --
-- 19 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 15V0 1

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