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CS40N20FA9E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Power MOSFET - Huajing Microelectronics

भाग संख्या CS40N20FA9E
समारोह Silicon N-Channel Power MOSFET
मैन्युफैक्चरर्स Huajing Microelectronics 
लोगो Huajing Microelectronics लोगो 
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CS40N20FA9E pdf
CS40N20F A9E
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
vdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 200V, VGS= 0V,
Ta = 25
VDS =160V, VGS= 0V,
Ta = 125
VGS =+20V
VGS =-20V
Rating
Min. Typ. Max.
200 -- --
-- 0.31 --
-- -- 10
-- -- 200
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=20A
VDS = VGS, ID = 250µA
Rating
Units
Min. Typ. Max.
-- 0.047 0.065
2.0 4.0 V
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =20A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =20A VDD = 100V
VGS = 10V RG = 3.9
ID =20A VDD =100V
VGS = 10V
Rating
Min. Typ. Max.
-- 65 --
-- 5000 --
-- 300 --
-- 7 --
Units
S
pF
Rating
Min. Typ. Max.
-- 19 --
-- 30 --
-- 68 --
-- 25 --
-- 68
-- 17 --
-- 16 --
Units
ns
nC
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 2 of 10 2015V01

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