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CS60N04A4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Power MOSFET - Huajing Microelectronics

भाग संख्या CS60N04A4
समारोह Silicon N-Channel Power MOSFET
मैन्युफैक्चरर्स Huajing Microelectronics 
लोगो Huajing Microelectronics लोगो 
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<?=CS60N04A4?> डेटा पत्रक पीडीएफ

CS60N04A4 pdf
CS60N04 A4
R
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA, reference 25
VDS = 40V, Tc = 25
VDS = 40V, Ta = 150
VGS=0V, ID=250µA
VDS =0V,VGS =-20V
Rating
Units
Min. Typ. Max.
40 -- --
V
-- 0.03 -- V/
-- -- 1
µA
-- -- 200
40 -- -- nA
-- -- -100 nA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=60A
VDS = VGS, ID = 250µA
Rating
Min. Typ. Max.
-- 8.5 13
1 -- 2
Units
m
V
Dynamic Characteristics
Symbol
Parameter
gfs Forward Trans conductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VDS= 10VId=50A
VGS = 0V VDS = 25V
f = 1.0MHz
Rating
Min. Typ. Max.
-- 300 --
-- 1920
-- 150
-- 115
Units
S
pF
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
ID = 60A VDD = 20V
VGS = 10V RG = 10
ID = 30A VDD = 32V
VGS = 10V
Rating
Min. Typ. Max.
-- 15 --
-- 14 --
-- 63 --
-- 20 --
-- 37.5
-- 10
-- 5.47
Units
ns
nC
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Page 2 of 7 2015V01

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डाउनलोड[ CS60N04A4 Datasheet.PDF ]


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CS60N04A4Silicon N-Channel Power MOSFETHuajing Microelectronics
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