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CS150N04A8 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Power MOSFET - Huajing Microelectronics

भाग संख्या CS150N04A8
समारोह Silicon N-Channel Power MOSFET
मैन्युफैक्चरर्स Huajing Microelectronics 
लोगो Huajing Microelectronics लोगो 
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<?=CS150N04A8?> डेटा पत्रक पीडीएफ

CS150N04A8 pdf
CS150N04 A8
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage VGS=0V, ID=250µA
vdss Temperature Coefficient
ID=250uA,Reference25
Drain to Source Leakage Current
VDS = 40V, VGS= 0V,Ta = 25
VDS =32V, VGS= 0V,Ta = 150
Gate to Source Forward Leakage
VGS =+30V
Gate to Source Reverse Leakage
VGS =-30V
Rating
Units
Min Typ. Max.
40 -- -- V
-- 0.035 -- V/
-- -- 1
µA
-- -- 500
-- -- 100 nA
-- -- -100 nA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
gfs Forward Transconductance
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=50A
VDS = VGS, ID = 250µA
VDS=10V, ID =50A
Rating
Units
Min. Typ. Max.
-- 4 4.5 m
2.0 3.5 V
-- 320 --
S
Dynamic Characteristics
Symbol
Rg
Ciss
Coss
Crss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VGS=0V, f = 1.0MHz
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =150A VDD = 30V
VGS = 10V RG = 10
ID =20A VDD =32V
VGS = 10V
Rating
Units
Min. Typ. Max.
-- 1 --
-- 8900 --
-- 550 -- pF
-- 480 --
Rating
Units
Min. Typ. Max.
-- 48 --
-- 88 --
-- 170 -- ns
-- 62 --
-- 160
-- 42 -- nC
-- 33 --
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 7 2 015V01

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CS150N04A8Silicon N-Channel Power MOSFETHuajing Microelectronics
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