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CS220N04A8H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Power MOSFET - Huajing Microelectronics

भाग संख्या CS220N04A8H
समारोह Silicon N-Channel Power MOSFET
मैन्युफैक्चरर्स Huajing Microelectronics 
लोगो Huajing Microelectronics लोगो 
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CS220N04A8H pdf
CS220N04 A8H
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown
Vo l t a g e
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 40V, VGS= 0V,
Ta = 25
VDS =32V, VGS= 0V,
Ta = 125
VGS =+20V
VGS =-20V
Rating
Min.
Typ.
Max
.
Units
40 -- --
V
-- 0.05 -- V/
-- -- 1
µA
-- -- 10
-- -- 100 nA
-- -- -100 nA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
V G S = 1 0 V, ID = 9 5 A
VDS = VGS, ID = 250µA
Rating
Min. Typ.
-- 3.2
2
Max.
4
4
Units
m
V
Dynamic Characteristics
Symbol
Parameter
gfs
Ciss
Coss
Crss
Forward Trans conductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =95A
VGS = 0V VDS =25V
f = 1.0MHz
Rating
Units
Min. Typ. Max.
-- 75 -- S
-- 13000 --
-- 1400 -- pF
-- 800 --
Test Conditions
ID =95A VDD =20V
VGS = 10V RG = 12
ID =95A VDD =20V
VGS = 10V
Rating
Min. Typ.
-- 53
-- 145
-- 135
-- 120
-- 138
-- 55
-- 30
Max.
--
--
--
--
--
--
--
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 15V0 1

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