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CS7N65FA9R डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Power MOSFET - Huajing Microelectronics

भाग संख्या CS7N65FA9R
समारोह Silicon N-Channel Power MOSFET
मैन्युफैक्चरर्स Huajing Microelectronics 
लोगो Huajing Microelectronics लोगो 
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<?=CS7N65FA9R?> डेटा पत्रक पीडीएफ

CS7N65FA9R pdf
CS7N65F A9R
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS =650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=3.5A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VDS=15V, ID =3.5A
VGS = 0V VDS = 25V
f = 1.0MHz
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
ID =7A VDD = 325V
RG =10
ID =7A VDD =520V
VGS = 10V
Rating
Min. Typ. Max.
650 -- --
-- 0.7 --
-- --
1
-- -- 100
-- -- 100
-- -- -100
Unit
s
V
V/
µA
µA
nA
nA
Rating
Min. Typ. Max.
-- 1.2 1.4
2.0 -- 4.0
Units
V
Rating
Min. Typ. Max.
-- 6.5 --
-- 1130 --
-- 93 --
-- 5.5 --
Units
S
pF
Rating
Min. Typ. Max.
-- 19 --
-- 21 --
-- 42 --
-- 19 --
-- 24 --
-- 5.1 --
-- 9.5 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 15V0 1

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