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HFF5N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - HUASHAN ELECTRONIC

भाग संख्या HFF5N60
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स HUASHAN ELECTRONIC 
लोगो HUASHAN ELECTRONIC लोगो 
पूर्व दर्शन
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<?=HFF5N60?> डेटा पत्रक पीडीएफ

HFF5N60 pdf
Shantou Huashan Electronic Devices Co.,Ltd.
HFF5N60
Electrical CharacteristicsTa=25unless otherwise specified)
Symbol
Items
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Min. Typ.
600
IDSS Zero Gate Voltage Drain Current
IGSS Gate – Body Leakage
On Characteristics
VGS(th) Gate Threshold Voltage
2.5
RDS(on) Static Drain-Source On-Resistance
2.0
Dynamic Characteristics and Switching Characteristics
Ciss Input Capacitance
530
Coss Output Capacitance
57
Crss Reverse Transfer Capacitance
7
td(on)
tr
Turn - On Delay Time
Rise Time
11
45
td(off)
tf
Turn - Off Delay Time
Fall Time
40
48
Qg Total Gate Charge
15
Qgs Gate–Source Charge
4
Qgd Gate–Drain Charge
7
Drain-Source Diode Characteristics and Maximun Ratings
IS
Continuous Source–Drain Diode
Forward Current
ISM
Pulsed Drain-Source Diode
Forward Current
VSD
Source–Drain Diode Forward
On–Voltage
Max. Unit
Conditions
1
10
±100
V
μA
μA
nA
ID=250μA ,VGS=0V
VDS =600V, VGS=0V
VDS =480V, VGS=0V,Tj=125
VGS= ±30V , VDS =0V
4.5 V VDS = VGS , ID=250μA
2.5 VGS=10V, ID=2.25A
690 pF
74
pF
VDS = 25 V, VGS = 0V,
f = 1.0 MHz
9 pF
33 nS
90 nS VDS = 300V, ID=4.5A,
88
nS
RG= 25
(Note 4,5)
100 nS
19 nC
nC
VDS=480V, ID=4.5A,
VGS = 10 V (Note 4,5)
nC
4.5 A
18 A
1.4 V IS=4.5A,VGS=0
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=18.9mH,IAS=4.5A, VDD=50V, RG=25 ,Starting TJ=25
3. ISD4.5A, di/dt200A/μS,VDDBVDSS, Starting TJ=25
4. Pulse Test: Pulse width300μS, Duty Cycle2%
5. Essentially independent of operating temperature

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डाउनलोड[ HFF5N60 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
HFF5N60N-Channel Enhancement Mode Field Effect TransistorHUASHAN ELECTRONIC
HUASHAN ELECTRONIC


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