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AUIRF7103Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N Channel MOSFET - Infineon

भाग संख्या AUIRF7103Q
समारोह Dual N Channel MOSFET
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
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<?=AUIRF7103Q?> डेटा पत्रक पीडीएफ

AUIRF7103Q pdf
  AUIRF7103Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
50 ––– ––– V VGS = 0V, ID = 250µA
––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
–––
–––
–––
–––
130
200
mVVGGSS
=
=
10V, ID = 3.0A 
4.5V, ID = 1.5A 
1.0 ––– 3.0 V VDS = VGS, ID = 250µA
3.4 ––– ––– S VDS = 15V, ID = 3.0A
––– ––– 2.0
––– ––– 25
µA
VDS =40V, VGS = 0V
VDS = 40V,VGS = 0V,TJ =55°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics  
––– 10 15
ID = 2.0A
––– 1.2 ––– nC   VDS = 40V
––– 2.8 –––
VGS = 10V
––– 5.1 –––
VDD = 25V
–––
–––
1.7
15
–––
–––
ns
ID = 1.0A
RG = 6.0
––– 2.3 –––
RD = 25
––– 255 –––
VGS = 0V
––– 69 ––– pF   VDS = 25V
––– 29 –––
ƒ = 1.0MHz
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 3.0
––– ––– 12
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– ––– 1.2 V TJ = 25°C,IS = 1.5A,VGS = 0V 
––– 35 53 ns TJ = 25°C ,IF = 1.5A,
––– 45 67 nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
Surface mounted on 1" in square Cu board.
Starting TJ = 25°C, L = 4.9mH, RG = 25, IAS = 3.0A. (See Fig. 12)
ISD 2.0A, di/dt 155A/µs, VDD V(BR)DSS, TJ 175°C.
Limited by TJmax , see Fig.16b, 16c, 19, 20 for typical repetitive avalanche performance.
2 2015-9-30

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