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AUIRF7103Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या AUIRF7103Q
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=AUIRF7103Q?> डेटा पत्रक पीडीएफ

AUIRF7103Q pdf
AUIRF7103Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 50 ––– ––– V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.057 –––
––– ––– 130
––– ––– 200
V/°C Reference to 25°C, ID = 1mA
ddm
VGS = 10V, ID = 3.0A
VGS = 4.5V, ID = 1.5A
VGS(th)
Gate Threshold Voltage
1.0 ––– 3.0 V VDS = VGS, ID = 250μA
gfs Forward Transconductance
3.4 ––– ––– S VDS = 15V, ID = 3.0A
IDSS
Drain-to-Source Leakage Current
––– ––– 2.0
––– ––– 25
μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– -100
––– 100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 10 15
ID = 2.0A
Qgs Gate-to-Source Charge
––– 1.2 ––– nC VDS = 40V
Qgd
Gate-to-Drain ("Miller") Charge
––– 2.8 –––
VGS = 10V
td(on) Turn-On Delay Time
––– 5.1 –––
VDD = 25V
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
d–––
–––
1.7
15
–––
–––
ns
ID = 1.0A
RG = 6.0
––– 2.3 –––
RD = 25
Ciss Input Capacitance
––– 255 –––
VGS = 0V
Coss Output Capacitance
––– 69 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 29 –––
ƒ = 1.0MHz
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 3.0
––– ––– 12
––– ––– 1.2
––– 35 53
––– 45 67
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
dV TJ = 25°C, IS = 1.5A, VGS = 0V
dns TJ = 25°C,IF = 1.5A
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width 400μs; duty cycle 2%.
ƒ Surface mounted on 1 in square Cu board.
„ Starting TJ = 25°C, L = 4.9mH, RG = 25, IAS = 3.0A. (See Figure 12).
… ISD 2.0A, di/dt 155A/μs, VDD V(BR)DSS, TJ 175°C.
† Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive avalanche performance.
2
December 5, 2012
www.irf.com

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