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AUIRF7304Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual P Channel MOSFET - Infineon

भाग संख्या AUIRF7304Q
समारोह Dual P Channel MOSFET
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
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<?=AUIRF7304Q?> डेटा पत्रक पीडीएफ

AUIRF7304Q pdf
  AUIRF7304Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-20 ––– ––– V VGS = 0V, ID = -250µA
––– -0.012 ––– V/°C Reference to 25°C, ID = -1mA
–––
–––
––– 0.090
––– 0.140

VGS
VGS
= -4.5V, ID
= -2.7V, ID
= -2.2A
= -1.8A
-0.70 ––– -1.5 V VDS = VGS, ID = -250µA
4.0 ––– ––– S VDS = -16V, ID = -2.2A
–––
–––
–––
–––
-1.0
-25
µA
VDS = - 16V, VGS = 0V
VDS = -16V,VGS = 0V,TJ =125°C
–––
–––
––– -100
––– 100
nA
VGS = -12V
VGS = 12V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics  
––– ––– 22
ID = -2.2A
––– ––– 3.3 nC   VDS = -16V
––– ––– 9.0
VGS = -4.5V, See Fig.6 & 12
––– 8.4 –––
VDD = -10V
–––
–––
26
51
–––
–––
ns  
ID = -2.2A
RG = 6.0
––– 33 –––
RD = 4.5See Fig.10
–––
–––
4.0
6.0
–––
–––
Between lead,
nH
 
6mm (0.25in.)
from package
and center of die contact
––– 610 –––
VGS = 0V
––– 310 ––– pF   VDS = -15V
––– 170 –––
ƒ = 1.0MHz, See Fig.5
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
-2.5
-17
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– -1.0 V TJ = 25°C,IS = -1.8A,VGS = 0V 
––– 56 84 ns TJ = 25°C ,IF = -2.2A,
––– 71 110 nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
ISD -2.2A, di/dt 50A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
When mounted on 1 inch square copper board , t sec.
2 2015-11-16

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