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AUIRF7309Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N and P Channel MOSFET - Infineon

भाग संख्या AUIRF7309Q
समारोह Dual N and P Channel MOSFET
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
1 Page
		
<?=AUIRF7309Q?> डेटा पत्रक पीडीएफ

AUIRF7309Q pdf
  AUIRF7309Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS  
IGSS  
Drain-to-Source Leakage Current  
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
Min.
30
-30
–––
–––
–––
–––
–––
–––
1.0
-1.0
5.2
2.5
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.032
-0.037
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
–––
–––
–––
–––
0.050
0.080
0.10
0.16
3.0
-3.0
–––
–––
1.0
-1.0
25
-25
± 100
± 100
Units
Conditions
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 2.4A 

VGS = 4.5V, ID = 2.0A 
VGS = -10V, ID = -1.8A 
VGS = -4.5V, ID = -1.5A 
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
S
VDS = 15V, ID = 2.4A
VDS = -24V, ID = -1.8A
VDS =24V, VGS = 0V
µA  
VDS = -24V,VGS = 0V 
VDS =24V, VGS = 0V ,TJ =125°C
VDS = -24V,VGS = 0V,TJ =125°C  
nA
 
VGS = ± 20V  
VGS = ± 20V  
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
N-Ch ––– ––– 25
N-Channel
P-Ch ––– ––– 25
ID = 2.6A, VDS = 16V,VGS = 4.5V
N-Ch –––
P-Ch –––
–––
–––
2.9
2.9
nC  

P-Channel
Qgd Gate-to-Drain Charge
N-Ch ––– ––– 7.9
P-Ch ––– ––– 9.0
ID = -2.2A,VDS = -16V,VGS = -4.5V
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
N-Ch ––– 6.8 –––
N-Channel
P-Ch ––– 11 –––
VDD = 10V,ID = 2.6A,RG = 6.0
N-Ch ––– 21 –––
RD = 3.8
P-Ch –––
N-Ch –––
17
22
–––
–––
ns   P-Channel
P-Ch ––– 25 –––
N-Ch ––– 7.7 –––
P-Ch ––– 18 –––
VDD = -10V,ID = -2.2A,RG = 6.0
RD = 4.5
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
N-P ––– 4.0 –––
Between lead, 6mm(0.25n) from
N-P ––– 6.0 ––– nH   package and center of die contact
N-Ch ––– 520 –––
N-Channel
P-Ch ––– 440 –––
VGS = 0V,VDS = 15V,ƒ = 1.0MHz
N-Ch –––
P-Ch –––
180 –––
200 –––
pF  

P-Channel
N-Ch ––– 72 –––
P-Ch
93 –––
VGS = 0V,VDS = -15V,ƒ = 1.0MHz
Diode Characteristics  
IS  
ISM  
VSD
trr
Qrr
ton
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
N-Ch ––– ––– 1.8
P-Ch ––– ––– -1.8
N-Ch ––– ––– 16
A 
P-Ch ––– ––– -12
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
––– 1.0
––– -1.0
47 71
53 80
V
TJ = 25°C,IS = 1.8A,VGS = 0V 
TJ = 25°C,IS = -1.8A,VGS = 0V 
ns
N-Channel
TJ = 25°C ,IF = 2.6A, di/dt = 100A/µs 
N-Ch –––
P-Ch
56
66
84
99
nC
P-Channel
TJ = 25°C,IF = -2.2A, di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 23)
N-Channel ISD 2.4A, di/dt 73A/µs, VDD V(BR)DSS, TJ 150°C.
P-Channel ISD -1.8A, di/dt 90A/µs, VDD V(BR)DSS, TJ 150°C
Pulse width 300µs; duty cycle 2%.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
2
2015-9-30

विन्यास 12 पेज
डाउनलोड[ AUIRF7309Q Datasheet.PDF ]


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