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AUIRF7316Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual P Channel MOSFET - Infineon

भाग संख्या AUIRF7316Q
समारोह Dual P Channel MOSFET
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
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<?=AUIRF7316Q?> डेटा पत्रक पीडीएफ

AUIRF7316Q pdf
  AUIRF7316Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-30 ––– ––– V VGS = 0V, ID = -250µA
––– 0.022 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.042 0.058
––– 0.076 0.098

VGS
VGS
= -10V, ID = -4.9A
= -4.5V, ID = -3.6A
-1.0 ––– -3.0 V VDS = VGS, ID = -250µA
––– 7.7 ––– S VDS = -15V, ID = -4.9A
–––
–––
–––
–––
-1.0
-25
µA
VDS = -24V, VGS = 0V
VDS = -24V,VGS = 0V,TJ =55°C
–––
–––
––– -100
––– 100
nA
VGS = -20V
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics  
––– 23 34
ID = -4.9A
––– 3.8 5.7 nC   VDS = -15V
––– 5.9 8.9
VGS = -10V, See Fig.10
––– 13 19
VDD = -15V
–––
–––
13
34
20
51
ns
ID = -1.0A
RG = 6.0
––– 32 48
RD = 15
––– 710 –––
VGS = 0V
––– 380 ––– pF   VDS = -25V
––– 180 –––
ƒ = 1.0MHz, See Fig.5
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
-0.78
44
42
Max. Units
Conditions
-2.5
-30
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
-1.0 V TJ = 25°C,IS = -1.7A,VGS = 0V 
66 ns TJ = 25°C ,IF = -1.7A,
63 nC di/dt = 100A/µs 
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
Starting TJ = 25°C, L = 35mH, RG = 25, IAS = -2.8A.
ISD -2.8A, di/dt 150A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board , t sec.
2 2015-9-30

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