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AUIRF7341Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N Channel MOSFET - Infineon

भाग संख्या AUIRF7341Q
समारोह Dual N Channel MOSFET
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
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<?=AUIRF7341Q?> डेटा पत्रक पीडीएफ

AUIRF7341Q pdf
  AUIRF7341Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55
–––
–––
–––
1.0
10.4
–––
–––
–––
–––
––– ––– V VGS = 0V, ID = 250µA
0.052 ––– V/°C Reference to 25°C, ID = 1mA
0.043 0.050
0.056 0.065

VGS
VGS
= 10V, ID = 5.1A
= 4.5V, ID = 4.42A
––– 3.0 V VDS = VGS, ID = 250µA
––– ––– S VDS = 10V, ID = 5.2A
––– 2.0
––– 25
µA
VDS =44V, VGS = 0V
VDS = 44V,VGS = 0V,TJ =150°C
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics  
––– 29 44
––– 2.9 4.4
––– 7.3 11
––– 9.2 –––
––– 7.7 –––
––– 31 –––
––– 12.5 –––
––– 780 –––
––– 190 –––
––– 66 –––
ID =5.2A
nC   VDS = 44V
VGS = 10V
VDD = 28V
ns
ID = 1.0A
RG = 6.0
VGS = 10V
VGS = 0V
pF   VDS = 25V
ƒ = 1.0MHz
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
51
Max. Units
Conditions
2.4
42
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
1.2 V TJ = 25°C,IS = 2.6A,VGS = 0V 
77 ns TJ = 25°C ,IF = 2.6A,
Qrr Reverse Recovery Charge
––– 76 114 nC di/dt = 100A/µs 
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
VDD =25V, Starting TJ = 25°C, L = 10.7mH, RG = 25, IAS = 5.2A.
Pulse width 300µs; duty cycle 2%.
Surface mounted FR-4 board, t 10sec.
2 2015-9-30

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