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AUIRF7343Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N and P Channel MOSFET - Infineon

भाग संख्या AUIRF7343Q
समारोह Dual N and P Channel MOSFET
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
1 Page
		
<?=AUIRF7343Q?> डेटा पत्रक पीडीएफ

AUIRF7343Q pdf
  AUIRF7343Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS  
IGSS  
Drain-to-Source Leakage Current  
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
Min.
55
-55
–––
–––
–––
–––
–––
–––
1.0
-1.0
7.9
3.3
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.059
0.054
0.043
0.056
0.095
0.150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
N-Ch –––
P-Ch –––
24
26
Qgs Gate-to-Source Charge
N-Ch –––
P-Ch –––
2.3
3.0
Qgd Gate-to-Drain Charge
N-Ch –––
P-Ch –––
7.0
8.4
td(on) Turn-On Delay Time
N-Ch –––
P-Ch –––
8.3
14
tr Rise Time
N-Ch –––
P-Ch –––
3.2
10
td(off) Turn-Off Delay Time
N-Ch –––
P-Ch –––
32
43
tf Fall Time
N-Ch –––
P-Ch –––
13
22
Ciss Input Capacitance
N-Ch –––
P-Ch –––
740
690
Coss Output Capacitance
N-Ch –––
P-Ch –––
190
210
Crss Reverse Transfer Capacitance
N-Ch –––
P-Ch
71
86
Diode Characteristics  
IS  
ISM  
VSD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.70
-0.80
60
54
120
85
Max.
–––
–––
–––
–––
0.050
0.065
0.105
0.170
–––
–––
–––
–––
2.0
-2.0
25
-25
± 100
± 100
36
38
3.4
4.5
10
13
12
22
4.8
15
48
64
20
32
–––
–––
–––
–––
–––
–––
Max.
2.0
-2.0
38
-27
1.2
-1.2
90
80
170
130
Units
Conditions
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 4.7A

VGS = 4.5V, ID = 3.8A
VGS = -10V, ID = -3.4A
VGS = -4.5V, ID = -2.7A
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
S
VDS = 10V, ID = 4.5A
VDS = -10V, ID = -3.1A
VDS = 55V, VGS = 0V
µA  
VDS = -55V,VGS = 0V 
VDS = 55V, VGS = 0V ,TJ = 55°C
VDS = -55V,VGS = 0V,TJ = 55°C  
nA
 
VGS = ± 20V  
VGS = ± 20V  
N-Channel
ID = 4.5A, VDS = 44V,VGS = 10V
nC  

P-Channel
ID = - 3.1A,VDS = -44V,VGS = -10V
N-Channel
VDD = 28V,ID = 1.0A,RG = 6.0
RD = 28
ns  

P-Channel
VDD = -28V,ID = -1.0A,RG = 6.0
RD = 28
N-Channel
VGS = 0V,VDS = 25V,ƒ = 1.0MHz
pF  

P-Channel
VGS = 0V,VDS = -25V,ƒ = 1.0MHz
Units
Conditions
A 
V
TJ = 25°C,IS = 2.0A,VGS = 0V 
TJ = 25°C,IS = -2.0A,VGS = 0V 
ns
N-Channel
TJ = 25°C ,IF = 2.0A, di/dt = 100A/µs
nC
P-Channel
TJ = 25°C,IF = -2.0A, di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 22)
N-Channel ISD 4.7A, di/dt 220A/µs, VDD V(BR)DSS, TJ 150°C.
P-Channel ISD -3.4A, di/dt -150A/µs, VDD V(BR)DSS, TJ 150°C
N-Channel Starting TJ = 25°C, L = 6.5mH, RG = 25, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH, RG = 25, IAS = -3.4A.
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board , t sec.
2 2015-9-30

विन्यास 11 पेज
डाउनलोड[ AUIRF7343Q Datasheet.PDF ]


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