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AUIRF7379Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N and P Channel MOSFET - Infineon

भाग संख्या AUIRF7379Q
समारोह Dual N and P Channel MOSFET
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
1 Page
		
<?=AUIRF7379Q?> डेटा पत्रक पीडीएफ

AUIRF7379Q pdf
  AUIRF7379Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS  
IGSS  
Drain-to-Source Leakage Current  
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
Min.
30
-30
–––
–––
–––
–––
–––
–––
1.0
-1.0
5.2
2.5
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.032
-0.037
0.038
0.055
0.070
0.130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
N-Ch –––
P-Ch –––
–––
–––
Qgs Gate-to-Source Charge
N-Ch –––
P-Ch –––
–––
–––
Qgd Gate-to-Drain Charge
N-Ch –––
P-Ch –––
–––
td(on) Turn-On Delay Time
N-Ch –––
P-Ch –––
6.8
11
tr Rise Time
N-Ch –––
P-Ch –––
21
17
td(off) Turn-Off Delay Time
N-Ch –––
P-Ch –––
22
25
tf   Fall Time  
N-Ch –––
P-Ch –––
7.7
18
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
–––
–––
–––
–––
4.0
6.0
520
440
180
200
72
93
Diode Characteristics  
Parameter
IS   Continuous Source Current (Body Diode)
ISM  
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
47
53
56
66
Max.
–––
–––
–––
–––
0.045
0.075
0.090
0.180
3.0
-3.0
–––
–––
1.0
-1.0
25
-25
± 100
± 100
25
25
2.9
2.9
7.9
9.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
3.1
-3.1
46
-34
1.0
-1.0
71
80
84
99
Units
Conditions
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 5.8A

VGS = 4.5V, ID = 4.9A
VGS = -10V, ID = -4.3A
VGS = -4.5V, ID = -3.7A
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
S
VDS = 15V, ID = 2.4A
VDS = -24V, ID = -1.8A
VDS =24V, VGS = 0V
µA  
VDS = -24V,VGS = 0V 
VDS =24V, VGS = 0V ,TJ = 125°C
VDS = -24V,VGS = 0V,TJ = 125°C  
nA
 
VGS = ± 20V  
VGS = ± 20V  
N-Channel
ID = 2.4A, VDS = 24V,VGS = 10V
nC  

P-Channel
ID = -1.8A,VDS = -24V,VGS = -10V
N-Channel
VDD = 15V,ID = 2.4A,RG = 6.0
RD = 6.2

ns   P-Channel
VDD = -15V,ID = -1.8A,RG = 6.0
RD = 8.2
Between lead,6mm (0.25in.)from
nH  
Package and center of die contact
N-Channel
VGS = 0V,VDS = 25V,ƒ = 1.0MHz
pF  

P-Channel
VGS = 0V,VDS = -25V,ƒ = 1.0MHz
Units
Conditions
A 
V
TJ = 25°C,IS = 1.8A,VGS = 0V 
TJ = 25°C,IS = -1.8A,VGS = 0V 
ns
N-Channel
TJ = 25°C ,IF = 2.4A, di/dt = 100A/µs
nC
P-Channel
TJ = 25°C,IF = -1.8A, di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
N-Channel ISD 2.4A, di/dt 73A/µs, VDD V(BR)DSS, TJ 150°C.
P-Channel ISD -1.8A, di/dt 90A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board , t 10sec.
2 2015-9-30

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डाउनलोड[ AUIRF7379Q Datasheet.PDF ]


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