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BF888 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Performance Bipolar NPN RF Transistor - Infineon

भाग संख्या BF888
समारोह High Performance Bipolar NPN RF Transistor
मैन्युफैक्चरर्स Infineon 
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BF888 pdf
BF888
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 5 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 25 V, VCE = 3 V, pulse measured
V(BR)CEO 4 4.7 - V
ICES
- 1 - nA
ICBO
-1-
IEBO
- 10 -
hFE - 250 - -
1For calculation of RthJA please refer to Application Note Thermal Resistance
2010-04-06
2

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