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NSVBCP69T1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP Silicon Epitaxial Transistor - ON Semiconductor

भाग संख्या NSVBCP69T1G
समारोह PNP Silicon Epitaxial Transistor
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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NSVBCP69T1G pdf
BCP69T1G, NSVBCP69T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 100 mAdc, IE = 0)
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
EmitterBase Breakdown Voltage (IE = 10 mAdc, IC = 0)
CollectorBase Cutoff Current (VCB = 25 Vdc, IE = 0)
EmitterBase Cutoff Current (VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CES
V(BR)CEO
V(BR)EBO
ICBO
IEBO
25
20
5.0
Vdc
Vdc
Vdc
10 mAdc
10 mAdc
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
CollectorEmitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc)
BaseEmitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE
VCE(sat)
VBE(on)
50
85
60
−−
375
−−
0.5
Vdc
1.0
Vdc
CurrentGain Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc)
fT 60 MHz
TYPICAL ELECTRICAL CHARACTERISTICS
400
150°C
300
VCE = 1 V
300
200
200 25°C
55°C
100
100
VCE = -10 V
70 TJ = 25°C
f = 30 MHz
50
0
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
10 30-10
-100
IC, COLLECTOR CURRENT (mA)
-1000
Figure 2. Current Gain Bandwidth Product
http://onsemi.com
2

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NSVBCP69T1GPNP Silicon Epitaxial TransistorON Semiconductor
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