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TSM60NB260 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - Taiwan Semiconductor

भाग संख्या TSM60NB260
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स Taiwan Semiconductor 
लोगो Taiwan Semiconductor लोगो 
पूर्व दर्शन
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<?=TSM60NB260?> डेटा पत्रक पीडीएफ

TSM60NB260 pdf
TSM60NB260
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Static (Note 4)
CONDITIONS
SYMBOL MIN
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA
BVDSS
600
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2.0
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
Drain-Source On-State Resistance
Dynamic (Note 5)
VGS = 10V, ID = 3.9A
RDS(on)
--
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg --
VDS = 380V, ID = 13A,
VGS = 10V
Qgs
--
Qgd --
Input Capacitance
Output Capacitance
VDS = 100V, VGS = 0V,
f = 1.0MHz
Ciss
Coss
--
--
Gate Resistance
Switching (Note 6)
F = 1MHz, open drain
Rg
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode (Note 4)
VDD = 380V,
RGEN = 25Ω,
ID = 13A, VGS = 10V,
td(on)
tr
td(off)
tf
--
--
--
--
Forward On Voltage
IS = 13A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
VR=100V, IS = 13A
dIF/dt = 100A/μs
Notes:
1. Current limited by package.
2. Pulse width limited by the maximum junction temperature.
3. L = 63mH, IAS = 2.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC
4. Pulse test: PW 300µs, duty cycle 2%.
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
VSD
trr
Qrr
--
--
--
TYP
--
3.0
--
--
0.19
30
6.6
11.7
1273
92
3.1
28.4
13.2
90.8
10
--
346.6
4.2
MAX UNIT
--
4.0
±100
1
0.26
V
V
nA
µA
Ω
--
-- nC
--
--
pF
--
-- Ω
--
--
ns
--
--
1.4 V
-- ns
-- μC
2 Version: A1511

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