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SBT10100UFCT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER - Pan Jit International

भाग संख्या SBT10100UFCT
समारोह EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
मैन्युफैक्चरर्स Pan Jit International 
लोगो Pan Jit International लोगो 
पूर्व दर्शन
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SBT10100UFCT pdf
PSBT10100UFCT
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Breakdown voltage per
diode
Instantaneous forward
voltage per diode
SYMBOL
VBR
VF
TEST CONDITION
IR=0.5mA
TJ=25oC
IF=1A
IF=3A
IF=5A
IF=1A
IF=3A
TJ=25oC
TJ=125oC
Reverse current per
diode
VR=80V
TJ=25oC
IR TJ=25oC
VR=100V
TJ=125oC
MIN.
100
-
-
-
-
-
-
-
-
TYP.
-
0.4
0.49
0.56
0.3
0.43
5
-
5
MAX. UNITS
-V
-
-
0.61
-
-
-
60
-
V
V
A
A
mA
5
4
3
2
1 per diode
0
0 25 50 75 100 125 150
TC, Case Temperature (°C)
Fig.1 Forward Current Derating Curve
1000
100
10
per diode
1
1 10
100
VR, Reverse Bias Voltage (V)
Fig.2 Typical Junction Capacitance
100
TJ = 150°C
10
1 TJ = 125°C
0.1
0.01 per diode
TJ = 75°C
0.001
TJ = 25°C
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Reverse Characteristics
100
10
TJ = 150°C
1
TJ = 25°C
TJ = 75°C
0.1
0.01
0
TJ = 125°C
per diode
0.2 0.4 0.6 0.8 1 1.2
VF, Forward Voltage (V)
Fig.4 Typical Forward Characteristics
April 14,2015-REV.00
Page 2

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SBT10100UFCTEXTREME LOW VF SCHOTTKY BARRIER RECTIFIERPan Jit International
Pan Jit International


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