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NVATS5A304PLZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - ON Semiconductor

भाग संख्या NVATS5A304PLZ
समारोह Power MOSFET
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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NVATS5A304PLZ pdf
NVATS5A304PLZ
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 5)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID = 1 mA, VGS = 0 V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10 A
Gate to Source Leakage Current
IGSS
VGS = 16 V, VDS = 0 V
10 A
Gate Threshold Voltage
VGS(th)
VDS = 10 V, ID = 1 mA
1.2 2.6 V
Forward Transconductance
gFS VDS = 10 V, ID = 50 A
100 S
Static Drain to Source On-State
Resistance
RDS(on)1
RDS(on)2
ID = 50 A, VGS = 10 V
ID = 50 A, VGS = 4.5 V
5.0 6.5 m
6.4 8.9 m
Input Capacitance
Ciss
13,000
pF
Output Capacitance
Coss
VDS = 20 V, f = 1 MHz
1,080
pF
Reverse Transfer Capacitance
Crss
760 pF
Turn-ON Delay Time
td(on)
80 ns
Rise Time
Turn-OFF Delay Time
tr
td(off)
See Fig.2
650 ns
780 ns
Fall Time
tf
460 ns
Total Gate Charge
Qg
250 nC
Gate to Source Charge
Qgs VDS = 36 V, VGS = 10 V, ID = 100 A
55 nC
Gate to Drain “Miller” Charge
Qgd
50 nC
Forward Diode Voltage
VSD
IS = 100 A, VGS = 0 V
1.0 1.5 V
Reverse Recovery Time
trr See Fig.3
90 ns
Reverse Recovery Charge
Qrr IS = 100 A, VGS = 0 V, di/dt = 100 A/s
245 nC
Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
Fig.3 Reverse Recovery Time Test Circuit
D
NVATS5A304PLZ
G
S
L
VDD
Driver MOSFET
www.onsemi.com
2

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भाग संख्याविवरणविनिर्माण
NVATS5A304PLZPower MOSFETON Semiconductor
ON Semiconductor


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