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SIC02A120S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SILICON CARBIDE SCHOTTKY DIODE - Pan Jit International

भाग संख्या SIC02A120S
समारोह SILICON CARBIDE SCHOTTKY DIODE
मैन्युफैक्चरर्स Pan Jit International 
लोगो Pan Jit International लोगो 
पूर्व दर्शन
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<?=SIC02A120S?> डेटा पत्रक पीडीएफ

SIC02A120S pdf
SiC02A120S
Maximum Ratings
PARAMETER
Non-Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave)
Non-Repetitive Peak Forward Surge Current
(TP=10uS, Pulse)
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction to Case
SYMBOL
IFSM
TEST CONDITIONS
TC=25oC
TC=125oC
TC=25oC
PD
TJ
TSTG
RθJC
TC=25oC
TC=125oC
VALUE
27
26
125
70
23
175
-55 to 175
2.1
UNITS
A
A
A
W
W
oC
oC
oC/W
Electrical Characteristics
PARAMETER
DC Blacking Voltage
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
SYMBOL
VDC
VF
IR
QC
C
TEST CONDITION
IR =100uA, TJ=25oC
IF =2A, TJ=25oC
IF =2A, TJ=175oC
VR =1200V, TJ=25oC
VR =1200V, TJ=175oC
IF =2A, di/dt=300A/uS,
VR =400V, TJ=25oC
VR =1V, TJ=25oC, f=1MHz
VR =400V, TJ=25oC, f=1MHz
VR =800V, TJ=25oC, f=1MHz
MIN.
1200
-
-
-
-
-
-
-
-
TYP.
-
1.6
2.4
<1
3
14
129
17
15
MAX.
-
1.8
2.6
50
250
UNITS
V
V
V
uA
uA
- nC
- pF
- pF
- pF
June 15,2016-REV.02
Page 2

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डाउनलोड[ SIC02A120S Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SIC02A120SSILICON CARBIDE SCHOTTKY DIODEPan Jit International
Pan Jit International


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