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SIC04A065T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SILICON CARBIDE SCHOTTKY DIODE - Pan Jit International

भाग संख्या SIC04A065T
समारोह SILICON CARBIDE SCHOTTKY DIODE
मैन्युफैक्चरर्स Pan Jit International 
लोगो Pan Jit International लोगो 
पूर्व दर्शन
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SIC04A065T pdf
SiC04A065T
Maximum Ratings
PARAMETER
SYMBOL TEST CONDITIONS
Non-Repetitive Peak Forward Surge Current
TC=25oC
(TP=10mS, Half Sine Wave)
TC=125oC
IFSM
Non-Repetitive Peak Forward Surge Current
TC=25oC
(TP=10uS, Pulse)
Power Dissipation
TC=25oC
PD TC=125oC
Operating Junction Temperature
TJ
Storage Temperature
TSTG
Thermal Resistance Junction to Case
RθJC
VALUE
29
24
127
75
25
175
-55 to 175
2
UNITS
A
A
A
W
W
oC
oC
oC/W
Electrical Characteristics
PARAMETER
DC Blacking Voltage
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
SYMBOL
VDC
VF
IR
QC
C
TEST CONDITION
IR =100uA, TJ=25oC
IF =4A, TJ=25oC
IF =4A, TJ=175oC
VR =650V, TJ=25oC
VR =650V, TJ=175oC
IF =4A, di/dt=300A/uS,
VR =400V, TJ=25oC
VR =1V, TJ=25oC, f=1MHz
VR =200V, TJ=25oC, f=1MHz
VR =400V, TJ=25oC, f=1MHz
MIN.
650
-
-
-
-
-
-
-
-
TYP.
770
1.5
1.9
1
6
MAX.
-
1.8
2.2
50
190
UNITS
V
V
V
uA
uA
11 - nC
155 -
25 -
25 -
pF
pF
pF
February 11,2015-REV.01
Page 2

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SIC04A065NDSILICON CARBIDE SCHOTTKY DIODEPan Jit International
Pan Jit International
SIC04A065NSSILICON CARBIDE SCHOTTKY DIODEPan Jit International
Pan Jit International


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