DataSheet.in

DMTH6016LPSQ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMTH6016LPSQ
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
1 Page
		
<?=DMTH6016LPSQ?> डेटा पत्रक पीडीएफ

DMTH6016LPSQ pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = 10V
Continuous Drain Current (Note 6) VGS = 10V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TC = +25°C
TC = +100°C
TA = +25°C
TA = +100°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
DMTH6016LPSQ
Value
60
±20
37
30.3
9.8
6.9
75
31
15.3
11.7
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.6
57
37.5
4
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
60
1
Typ Max Unit
Test Condition
— — V VGS = 0V, ID = 250µA
1 µA VDS = 48V, VGS = 0V
±100 nA VGS = ±20V, VDS = 0V
2.5 V VDS = VGS, ID = 250µA
12 16 mVGS = 10V, ID = 20A
21 24
VGS = 4.5V, ID = 18A
0.7 1.2
V VGS = 0V, IS = 1A
864
282
27
1.3
8.4
17
3.1
4.3
3.4
5.2
13
7
22
11
pF
VDS = 30V, VGS = 0V,
f = 1MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nCVDS = 30V, ID = 10A
ns
VGS = 10V, VDS = 30V,
RG = 6Ω, ID = 10A
ns
nC IF = 10A, di/dt = 100A/µs
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
PowerDI is a registered trademark of Diodes Incorporated.
DMTH6016LPSQ
Document number: DS38518 Rev. 2 - 2
2 of 7
www.diodes.com
July 2016
© Diodes Incorporated

विन्यास 7 पेज
डाउनलोड[ DMTH6016LPSQ Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
DMTH6016LPSN-CHANNEL ENHANCEMENT MODE MOSFETDiodes
Diodes
DMTH6016LPSQN-CHANNEL ENHANCEMENT MODE MOSFETDiodes
Diodes


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English