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DMTH4004SK3Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMTH4004SK3Q
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMTH4004SK3Q pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7)
Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.2mH
Avalanche Energy, L=0.2mH
TC = +25°C
(Note 10)
TC = +100°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMTH4004SK3Q
Value
40
±20
100
100
100
160
40
160
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RJA
PD
RJC
TJ, TSTG
Value
3.9
38
180
0.8
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
40
2



Typ
2.6
0.9
4305
1441
102
0.77
68.6
16.8
14.2
9.5
6.7
26.4
8.1
52.4
78.2
Max
1
±100
4
3.2
1.2



Unit
Test Condition
V VGS = 0V, ID = 1mA
µA VDS = 32V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA
mVGS = 10V, ID = 90A
V VGS = 0V, IS = 20A
pF VDS = 25V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDS = 20V, ID = 90A,
VGS = 10V
ns
VDD = 20V, VGS = 10V,
ID = 90A, RG = 3.5Ω
ns
nC
IF = 50A, di/dt = 100A/μs
Notes:
6. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air conditions
whilst operating in a steady state.
7. Thermal resistance from junction to solder point (on the exposed drain pin).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
10. Package limited.
DMTH4004SK3Q
Document number: DS38660 Rev. 1 - 2
2 of 7
www.diodes.com
July 2016
© Diodes Incorporated

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