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DMT3003LFG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMT3003LFG
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMT3003LFG pdf
DMT3003LFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 5) VGS = 10V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L=1mH
Avalanche Energy, L=1mH
TC = +25°C
TC = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
30
±20
100
90
22
18
3
100
16
250
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.4
52
62
2
-55 to +150
Units
V
V
A
A
A
A
A
mJ
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Bodyy Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
Min
30
Typ Max
——
1
±100
VGS(TH)
RDS(ON)
VSD
1
3
2.4 3.2
4 5.5
0.75 1
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
2,370
1,360
240
0.6
20
44
7
8
6.2
4.3
21
8
25
37
Unit
Test Condition
V VGS = 0V, ID = 1mA
μA VDS = 24V, VGS = 0V
nA VGS = +20V, VDS = 0V
VGS = -16V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 20A
VGS = 4.5V, ID = 15A
V VGS = 0V, IS = 10A
pF
VDS = 15V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 15V, ID = 20A
ns
VDD = 15V, VGS = 10V,
RL = 0.75, RG = 3, ID = 20A
ns
nC
IF = 15A, di/dt = 500A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMT3003LFG
Document number: DS37819 Rev. 2 - 2
2 of 7
www.diodes.com
June 2016
© Diodes Incorporated

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