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DMT3002LPS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMT3002LPS
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMT3002LPS pdf
DMT3002LPS
Maximum Ratings (@TC = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS = 10V (Note 7)
Steady
State
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L=3mH (Note 8)
Avalanche Energy, L=3mH (Note 8)
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
Value
30
±16
100
100
100
150
15
700
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics (@TC = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
TC = +25°C
Symbol
PD
RθJA
PD
RθJA
PD
RθJC
TJ, TSTG
Value
1.2
103
2.5
51
136
1.1
-55 to +150
Units
W
°C/W
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TC = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min Typ Max
BVDSS
IDSS
IGSS
30
——
1
±100
VGS(TH)
RDS(ON)
VSD
1
2
1.25 1.6
2 2.5
0.8 1.1
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
5,000
2,660
300
0.75
37
77
10
14
21
45
32
26
44
52
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 24V, VGS = 0V
nA VGS = ±16V, VDS = 0V
V VDS = VGS, ID = 1mA
mVGS = 10V, ID = 25A
VGS = 4.5V, ID = 25A
V VGS = 0V, IS = 25A
pF
VDS = 15V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 15V, ID = 25A
ns
VDD = 15V, VGS = 4.5V,
ID = 25A, RG = 4.7
ns
nC
IS = 15A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMT3002LPS
Document number: DS38283 Rev. 4 - 2
2 of 7
www.diodes.com
June 2016
© Diodes Incorporated

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