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DMT10H015LCG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMT10H015LCG
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMT10H015LCG pdf
DMT10H015LCG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current, VGS = 10V (Note 6)
Steady
State
Continuous Drain Current, VGS = 10V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 3mH (Note 8)
Avalanche Energy, L = 3mH (Note 8)
TA = +25C
TA = +70C
TC = +25C
TC = +100C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
100
±20
9.4
7.5
34
21
1.6
54
7.5
85
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
1
118
2.1
59
4.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
100
1.4
Typ
2
12.1
15
18.9
0.9
1871
261
6.9
0.75
33.3
6.9
5.1
6.5
7
19.7
8.1
37.9
51.9
Max
1
±100
3.5
15
19.5
26
1.3
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 1mA
µA VDS = 80V, VGS = 0V
nA VGS = 20V, VDS = 0V
V VDS = VGS, ID = 250µA
mΩ VGS = 10V, ID = 20A
VGS = 6V, ID = 20A
mΩ VGS = 4.5V, ID = 5A
V VGS = 0V, IS = 20A
pF
VDS = 50V, VGS = 0V
f = 1MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nCVDD = 50V, ID = 10A,
VGS = 10V
ns
VDD = 50V, VGS = 10V,
ID = 10A, Rg = 6Ω
ns
nC IF = 10A, di/dt = 100A/µs
DMT10H015LCG
Document number: DS38362 Rev. 3 - 2
2 of 7
www.diodes.com
June 2016
© Diodes Incorporated

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