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DMNH6042SPDQ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMNH6042SPDQ
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
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DMNH6042SPDQ pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
Continuous Drain Current (Note 8) VGS = 10V
Steady
State
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 8)
Avalanche Current (Note 9) L = 10mH
Avalanche Energy (Note 9) L = 10mH
TA = +25°C
TA = +70°C
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
DMNH6042SPDQ
Value
60
±20
5.7
4.6
24
17
32
24
3.5
65
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RϴJA
PD
RϴJA
RϴJC
TJ, TSTG
Value
1.2
105
54
2.5
51
26
3.5
-55 to +175
Notes:
6. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
Unit
W
°C/W
W
°C/W
°C
DMNH6042SPDQ
Document number: DS37388 Rev. 6 - 2
2 of 8
www.diodes.com
November 2018
© Diodes Incorporated

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