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DMNH6042SK3Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMNH6042SK3Q
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMNH6042SK3Q pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 8) VGS = 10V
Steady
State
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 8)
Avalanche Current (Note 9) L = 10mH
Avalanche Energy (Note 9) L = 10mH
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
DMNH6042SK3Q
Value
60
±20
25
17
40
25
3.5
65
Units
V
V
A
A
A
A
mJ
Thermal Characteristics
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
2
73
36
3.5
43
21
3.2
-55 to +175
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
60
1.0
Typ
30
45
0.8
584
83
24
3.8
4.2
8.8
1.8
1.8
3.4
1.9
10.1
4.5
12.9
5.4
Max
1
±100
3.0
50
65
1.2
Unit
Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 60V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 6A
VGS = 4.5V, ID = 6A
V VGS = 0V, IS = 2.6A
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 44V, ID = 5.2A
nC
ns
ns VGS = 10V, VDS = 30V,
ns RG = 6Ω, ID = 1A
ns
ns
nC
IF = 2.6A, di/dt = 100A/μs
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
DMNH6042SK3Q
Document number: DS38902 Rev. 2 - 2
2 of 7
www.diodes.com
August 2016
© Diodes Incorporated

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