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DMNH6012LK3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMNH6012LK3
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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DMNH6012LK3 pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH (Note 7)
Avalanche Energy, L = 0.1mH (Note 7)
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
DMNH6012LK3
Value
60
±20
60
40
120
2.6
45
100
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady state
Steady state
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
2.0
74
3.8
40
1.2
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current, TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
60
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
1
Typ
8
10
0.7
1926
330
112
2.0
16.3
35.2
7.6
6.9
6.4
11.9
16.5
5
28
23
Max
1
±100
3
12
18
1.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 60V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 25A
VGS = 4.5V, ID = 25A
V VGS = 0V, IS = 1.7A
pF
pF VDS = 30V, VGS = 0V,
f = 1MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 30V, ID = 25A
nC
ns
ns VGS = 10V, VDS = 30V,
ns RG = 3Ω, ID = 25A
ns
ns
nC
IF = 25A, di/dt = 100A/μs
DMNH6012LK3
Document number: DS37381 Rev. 3 - 2
2 of 7
www.diodes.com
October 2015
© Diodes Incorporated

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