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DMNH6008SCT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMNH6008SCT
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMNH6008SCT pdf
DMNH6008SCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Steady
State
Maximum Continuous Body Diode Forward Current (Note 5)
Avalanche Current (Note 6) L=0.1mH
Avalanche Energy (Note 6) L=0.1mH
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
Value
60
20
130
90
200
80
62
190
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5) TC = +25°C
TC = +100°C
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJC
TJ, TSTG
Value
210
100
0.7
-55 to +175
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
60
2
Typ
6.0
0.7
2,596
437
118
2.0
21
40
8.3
11.8
5.7
5.0
15.6
3.4
33
33
Max
1
±100
4
8.0
1.2
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 48V, VGS = 0V
nA VGS = 16V, VDS = 0V
V VDS = VGS, ID = 250µA
mVGS = 10V, ID = 20A
V VGS = 0V, IS = 1A
pF
VDS = 30V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDD = 30V, ID = 20A
ns
VDD = 30V, VGS = 10V,
RG = 1, ID = 20A
ns
nC IF = 20A, di/dt = 100A/µs
DMNH6008SCT
Document number: DS38138 Rev. 2 - 2
2 of 7
www.diodes.com
June 2016
© Diodes Incorporated

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