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DMNH4011SPS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMNH4011SPS
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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<?=DMNH4011SPS?> डेटा पत्रक पीडीएफ

DMNH4011SPS pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (VGS = 10V) (Note 6)
TA = +25C
TA = +70C
Continuous Drain Current (VGS = 10V) (Note 7)
TC = +25C
TC = +100°C
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Avalanche Current, L = 1mH (Note 8)
Avalanche Energy, L = 1mH (Note 8)
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMNH4011SPS
Value
40
±20
13
10.8
80
57
80
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
TC = +25°C
Symbol
PD
RJA
PD
RJA
PD
RJC
TJ, TSTG
Value
1.5
99
-55 to +175
Units
W
°C/W
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
40
2
Typ
8.5
0.9
1405
247
108
2.2
25.5
4.6
6.9
4.6
3.7
16
5.1
22.1
13.4
Max
1
±100
4
10
1.2
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 40V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 20A
V VGS = 0V, IS = 20A
pF VDS = 20V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 20V, VGS = 10V, ID = 50A
ns
VDD = 20V, VGS = 10V,
ID = 50A, RG = 3.5Ω
ns
nC
IF = 50A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMNH4011SPS
Document number: DS37401 Rev. 2 - 2
2 of 7
www.diodes.com
April 2016
© Diodes Incorporated

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