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FMH30N60S1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel enhancement mode power MOSFET - Fuji Electric

भाग संख्या FMH30N60S1
समारोह N-Channel enhancement mode power MOSFET
मैन्युफैक्चरर्स Fuji Electric 
लोगो Fuji Electric लोगो 
पूर्व दर्शन
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<?=FMH30N60S1?> डेटा पत्रक पीडीएफ

FMH30N60S1 pdf
FMH30N60S1
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
• Dynamic Ratings
Description
Symbol Conditions
min.
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective output capacitance,
energy related (Note *6)
gfs
Ciss
Coss
Crss
Co(er)
ID=15A
VDS=25V
VDS=10V
VGS=0V
f=1MHz
VGS=0V
VDS=0…480V
13
-
-
-
-
Effective output capacitance,
time related (Note *7)
VGS=0V
Co(tr)
VDS=0…480V
ID=constant
-
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
VDD=400V, VGS=10V
ID=15A, RG=13Ω
See Fig.3 and Fig.4
tf
-
-
-
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source crossover Charge
QG
QGS
QGD
QSW
VDD=480V, ID=30A
VGS=10V
See Fig.5
-
-
-
-
Note *6 : Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% BVDSS.
Note *7 : Co(tr) is a fixed capacitance that gives the same charging times as Coss while VDS is rising from 0 to 80% BVDSS.
• Reverse Diode
Description
Avalanche Capability
Diode Forward On-Voltage
Symbol
IAV
VSD
Conditions
L=21.7mH, Tch=25°C
See Fig.1 and Fig.2
IF=30A, VGS=0V
Tch=25°C
min.
6.6
-
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
trr
Qrr
Irp
IF=30A, VGS=0V
VDD=400V
-di/dt=100A/μs
Tch=25°C
See Fig.6
-
-
-
typ.
26
2200
4670
430
127
450
31
57
136
17
73
18
25
11.5
typ.
-
0.9
430
8.6
38
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
-
1.35
-
-
-
Unit
S
pF
ns
nC
Unit
A
V
ns
μC
A
Thermal Characteristics
Description
Channel to Case
Channel to Ambient
Symbol
Rth(ch-c)
Rth(ch-a)
min.
-
-
typ.
-
-
max.
0.57
50
Unit
°C/W
°C/W
2

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