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2N6660 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Seme LAB

भाग संख्या 2N6660
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Seme LAB 
लोगो Seme LAB लोगो 
पूर्व दर्शन
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2N6660 pdf
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6660
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0
VDS = VGS
ID = 1.0µA
ID = 1.0mA
VGS(th)
Gate Threshold Voltage
TC = 125°C
TC = -55°C
IGSS
Gate-Source Leakage Current
VGS = ±20V
VDS = 0V
TC = 125°C
IDSS
Zero Gate Voltage
Drain Current
VGS = 0
VDS = 48V
TC = 125°C
ID(ON)(2)
On-State Drain Current
VDS = 10V
VGS = 10V
RDS(on)(2)
Static Drain-Source
On-State Resistance
gfs(2)
VSD(2)
trr(2)
Forward Transconductance
Body Diode Forward Voltage
Body Diode Reverse Recovery
VGS = 5V
VGS = 10V
VDS = 25V
VGS = 0
VGS = 0
ID = 0.3A
ID = 1.0A
TC = 125°C
ID = 0.5A
IS = 1.0A
IS = 1.0A
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
td(on)
Turn-On Delay Time
td(off)
Turn-Off Delay Time
VGS = 0
VDS = 25V
f = 1.0MHz
VDD = 25V
ID = 1.0A
RG = 50
Min. Typ. Max. Units
60 V
0.8 2.0
0.3
2.5
±100
±500
1.0
100
1.5
5.0
3.0
5.6
170
0.7 1.6
350
V
nA
µA
A
mƱ
V
ns
50
40 pF
10
10
ns
10
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8263
Website: http://www.semelab-tt.com
Issue 2
Page 2 of 3

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