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11AA02E48 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - EEPROM - Microchip

भाग संख्या 11AA02E48
समारोह EEPROM
मैन्युफैक्चरर्स Microchip 
लोगो Microchip लोगो 
पूर्व दर्शन
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11AA02E48 pdf
11AA02E48/11AA02E64
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (†)
VCC.............................................................................................................................................................................6.5V
SCIO w.r.t. VSS.................................................................................................................................... -0.6V to VCC+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias .................................................................................................................-40°C to 85°C
ESD protection on all pins ..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1: DC CHARACTERISTICS
DC CHARACTERISTICS
Electrical Characteristics:
Industrial (I):
VCC = 2.5V to 5.5V
VCC = 1.8V to 2.5V
TA = -40°C to +85°C
TA = -20°C to +85°C
Param.
No.
Symbol
Characteristic
Min.
Max. Units
Test Conditions
D1
VIH High-Level Input
0.7 VCC
VCC+1
V
Voltage
D2 VIL Low-Level Input
Voltage
-0.3
0.3 VCC
V VCC 2.5V
-0.3
0.2 VCC
V VCC < 2.5V
D3
VHYS Hysteresis of Schmitt 0.05 Vcc
Trigger Inputs
(SCIO)
V VCC 2.5V (Note 1)
D4
VOH High-Level Output
VCC -0.5
V IOH = -300 µA, VCC = 5.5V
Voltage
VCC -0.5
V IOH = -200 µA, Vcc = 2.5V
D5 VOL Low-Level Output
Voltage
0.4 V IOI = 300 µA, VCC = 5.5V
0.4 V IOI = 200 µA, Vcc = 2.5V
D6
IO Output Current Limit
±4 mA VCC = 5.5V (Note 1)
(Note 2)
— ±3 mA Vcc = 2.5V (Note 1)
D7 ILI Input Leakage
Current (SCIO)
— ±1 µA VIN = VSS or VCC
D8
CINT Internal Capacitance
(all inputs and
outputs)
7 pF TA = 25°C, FCLK = 1 MHz,
VCC = 5.0V (Note 1)
D9 ICCREAD Read Operating
Current
— 3 mA VCC = 5.5V, FBUS = 100 kHz,
CB = 100 pF
— 1 mA VCC = 2.5V, FBUS = 100 kHz,
CB = 100 pF
D10 ICCWRITE Write Operating
Current
— 5 mA VCC = 5.5V
— 3 mA VCC = 2.5V
D11 Iccs Standby Current — 1 µA VCC = 5.5V, TA = 85°C
D12 ICCI Idle Mode Current
50 µA VCC = 5.5V
Note 1: This parameter is periodically sampled and not 100% tested.
2: The SCIO output driver impedance will vary to ensure IO is not exceeded.
DS20002122D-page 2
2008-2016 Microchip Technology Inc.

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