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HM5N60I डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 600V N-Channel MOSFET - H&M Semiconductor

भाग संख्या HM5N60I
समारोह 600V N-Channel MOSFET
मैन्युफैक्चरर्स H&M Semiconductor 
लोगो H&M Semiconductor लोगो 
पूर्व दर्शन
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<?=HM5N60I?> डेटा पत्रक पीडीएफ

HM5N60I pdf
HM5N60K / HM5N60I
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.6
--
--
--
--
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.25 A
2.0 --
-- 2.0
Max
--
--
1
10
100
-100
4.0
2.5
Units
V
V/°C
µA
µA
nA
nA
V
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 560
-- 55
-- 7
--
--
--
pF
pF
pF
VDD = 300 V, ID = 4.5A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 4.5 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
10
40
40
50
16
2.5
6.5
--
--
--
--
-
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 4.5 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 19 mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 4.5 A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 4.5
-- 18.0
-- 1.4
300 --
2.0 --
A
A
V
ns
µC
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com

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डाउनलोड[ HM5N60I Datasheet.PDF ]


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