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FDMA905 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode Power MOSFET - Tuofeng Semiconductor

भाग संख्या FDMA905
समारोह P-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स Tuofeng Semiconductor 
लोगो Tuofeng Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMA905?> डेटा पत्रक पीडीएफ

FDMA905 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
FDMA905
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
V(BR) DSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Condition
Min Typ Max Unit
VGS=0V ID=-250μA
VDS=-12V,VGS=0V
VGS=±8V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-6.7A
VGS=-2.5V, ID=-6.2A
VDS=-10V,ID=-6.7A
-12 -
-
V
- - -1 μA
- - ±100 nA
-0.4 -0.7
- 17
- 21
- 40
-1
21
27
-
V
m
m
S
VDS=-10V,VGS=0V,
F=1.0MHz
- 2700
- 680
- 590
-
-
-
PF
PF
PF
VDD=-10V,ID=-1A
VGS=-4.5V,RGEN=10
VDS=-6V,ID=-10A,
VGS=-4.5V
- 11
-
- 35
-
- 30
-
- 10
-
- 35 48
-5
-
- 10
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=-8A
- - -1.2 V
- - -16
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Page 2

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