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4835 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode Field Effect Transistor - Tuofeng Semiconductor

भाग संख्या 4835
समारोह P-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Tuofeng Semiconductor 
लोगो Tuofeng Semiconductor लोगो 
पूर्व दर्शन
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<?=4835?> डेटा पत्रक पीडीएफ

4835 pdf
Shenzhen Tuofeng Semiconductor Technology co., LTD
4835
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol
PD
TJ
TSTG
RθJA
Parameter
Maximum Power Dissipation
Maximum Junction Temperature
TA = 25°C
TA = 100°C
Storage Temperature Range
Thermal Resistance - Junction to Ambient
Rating
2.5
1
150
-55 to 150
50
Unit
W
°C
°C/W
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS
IDSS
VGS(th)
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
VGS=0V, ID= -250µA
VDS= -30V, VGS=0V
VDS=VGS, ID= -250µA
VGS= ±25V , VDS=0V
RDS(ON)
Drain-Source On-state Resistance b VGS= -10V, ID= -8A
VGS= -4.5V, ID= -5A
VSD Diode Forward Voltage b
ISD= -3A, VGS=0V
Dynamica
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS= -15V, VGS= -10V,
ID= -4.6A
VDD= -25V, ID= -2A,
VGEN= -10V, RG=6
RL=12.5
VGS=0V, VDS=-25V
Frequency = 1.0MHZ
Notes
a : Guaranteed by design, not subject to production testing
b : Pulse test ; pulse width 500µs, duty cycle 2%
APM4835
Min. Typa. Max.
Unit
-30 V
-1 µA
-1 -1.5 -2 V
±100 nA
16 19
m
24 30
-0.7 -1.3 V
48
10
9
16
17
75
31
3800
590
250
60
30
30
120
80
nC
ns
pF
2

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डाउनलोड[ 4835 Datasheet.PDF ]


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