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IXXH40N65B4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 650V IGBTs - IXYS

भाग संख्या IXXH40N65B4
समारोह 650V IGBTs
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXXH40N65B4?> डेटा पत्रक पीडीएफ

IXXH40N65B4 pdf
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 40A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 40A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 40A, VGE = 15V
VCE = 400V, RG = 5
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 40A, VGE = 15V
VCE = 400V, RG = 5
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
10 17
S
1560
103
57
pF
pF
pF
77 nC
12 nC
29 nC
28
53
1.40
144
54
0.56
0.90
ns
ns
mJ
ns
ns
mJ
24 ns
42 ns
1.87 mJ
126 ns
73 ns
0.78 mJ
0.33 °C/W
0.21 °C/W
IXXH40N65B4
TO-247 (IXXH) Outline
1 - Gate
2,4 - Collector
3 - Emitter
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

विन्यास 6 पेज
डाउनलोड[ IXXH40N65B4 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXXH40N65B4650V IGBTsIXYS
IXYS


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