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IXXH30N60C3D1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 600V IGBTs - IXYS

भाग संख्या IXXH30N60C3D1
समारोह 600V IGBTs
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXXH30N60C3D1?> डेटा पत्रक पीडीएफ

IXXH30N60C3D1 pdf
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 24A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 24A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 24A, VGE = 15V
VCE = 400V, RG = 10
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 24A, VGE = 15V
VCE = 400V, RG = 10
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
8 14
S
1185
133
25
pF
pF
pF
37 nC
10 nC
15 nC
23 ns
33 ns
0.50 mJ
77 125 ns
32 ns
0.27 0.45 mJ
22 ns
35 ns
1.13 mJ
88 ns
78 ns
0.40 mJ
0.55 °C/W
0.21 °C/W
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min. Typ. Max.
VF IF = 30A, VGE = 0V, Note 1
TJ = 150°C
2.7 V
1.6 V
tIRrrM
IF = 30A, VGE = 0V, -diF/dt = 100A/μs,
VR = 100V
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR
=
30V
TTJJ
=
=
100°C
100°C
100
25
4A
ns
ns
RthJC
0.9 °C/W
IXXH30N60C3D1
TO-247 (IXXH) Outline
1 - Gate
2,4 - Collector
3 - Emitter
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2

विन्यास 7 पेज
डाउनलोड[ IXXH30N60C3D1 Datasheet.PDF ]


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