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IXXA30N65C3HV डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 650V IGBTs - IXYS

भाग संख्या IXXA30N65C3HV
समारोह 650V IGBTs
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXXA30N65C3HV?> डेटा पत्रक पीडीएफ

IXXA30N65C3HV pdf
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 24A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 24A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 24A, VGE = 15V
VCE = 400V, RG = 10Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 24A, VGE = 15V
VCE = 400V, RG = 10Ω
Note 2
RthJC
Characteristic Values
Min.
Typ. Max.
8 14
S
1185
133
25
pF
pF
pF
37 nC
10 nC
15 nC
23 ns
33 ns
0.50 mJ
77 125 ns
32 ns
0.27 0.45 mJ
22 ns
35 ns
1.13 mJ
88 ns
78 ns
0.40 mJ
0.65 °C/W
IXXA30N65C3HV
TO-263 (HV) Outline
PIN: 1 - Gate
2 - Emitter
3 - Collector
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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डाउनलोड[ IXXA30N65C3HV Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXXA30N65C3HV650V IGBTsIXYS
IXYS


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