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IXXA50N60B3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 600V IGBTs - IXYS

भाग संख्या IXXA50N60B3
समारोह 600V IGBTs
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXXA50N60B3?> डेटा पत्रक पीडीएफ

IXXA50N60B3 pdf
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 36A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 36A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 36A, VGE = 15V
VCE = 360V, RG = 5
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 36A, VGE = 15V
VCE = 360V, RG = 5
Note 2
RthJC
RthCS
TO-247
TO-220
IXXA50N60B3 IXXP50N60B3
IXXH50N60B3
Characteristic Values
Min.
Typ. Max.
TO-220 Outline
12 19
S
2230
195
44
pF
pF
pF
70 nC
16 nC
29 nC
27 ns
40 ns
0.67 mJ
100 150 ns
135 ns
0.74 1.20 mJ
Pins: 1 - Gate
2 - Collector
3 - Emitter
30 ns
45 ns
1.40 mJ
130 ns
190 ns
1.20 mJ
0.25 °C/W
0.21 °C/W
0.50 °C/W
TO-247 Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
TO-263 Outline
1 - Gate
2,4 - Collector
3 - Emitter
1 = Gate
2,4 = Collector
3 = Emitter
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

विन्यास 6 पेज
डाउनलोड[ IXXA50N60B3 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXXA50N60B3600V IGBTsIXYS
IXYS


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