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IXTC36P15P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - IXYS

भाग संख्या IXTC36P15P
समारोह Power MOSFET
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXTC36P15P?> डेटा पत्रक पीडीएफ

IXTC36P15P pdf
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs VDS = -10V, ID = -18A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = - 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = -18A
RG = 5Ω (External)
Qg(on)
Qgs
Qgd
VGS = -10V, VDS = 0.5 • VDSS, ID = -18A
RthJC
RthCS
Characteristic Values
Min. Typ. Max.
11 19
S
2950
615
115
pF
pF
pF
28 ns
37 ns
45 ns
14 ns
55 nC
21 nC
20 nC
1.00 °C/W
0.15 °C/W
IXTC36P15P
IXTR36P15P
ISOPLUS220TM Outline
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = -18A, VGS = 0V, Note 1
trr
QRM
IF = - 25, -di/dt = -100A/μs
VR = -100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
- 36 A
-100 A
- 3.0 V
150 ns
2.0 μC
Ref: IXYS CO 0177 R0
ISOPLUS 247TM Outline
Note 1: Pulse test, t 300μs, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
bb12
1.91 2.13
2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
.190
.090
.075
.205
.100
.085
.045
.075
.115
.055
.084
.123
.024
.819
.620
.031
.840
.635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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डाउनलोड[ IXTC36P15P Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXTC36P15PPower MOSFETIXYS
IXYS


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