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IXTR30N25 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - IXYS

भाग संख्या IXTR30N25
समारोह Power MOSFET
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXTR30N25?> डेटा पत्रक पीडीएफ

IXTR30N25 pdf
Symbol
g
fs
Ciss
Coss
Crss
td(on)
t
r
td(off)
t
f
Qg(on)
Qgs
Qgd
R
thJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = IT
Notes 2, 3
VGS = 0 V, VDS = 25 V, f = 1 MHz
24 32
3950
510
177
S
pF
pF
pF
19 ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 30A 19 ns
RG = 3.6 (External), Notes 2, 3
79 ns
17 ns
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Notes 2, 3
136 nC
32 nC
52 nC
0.75 K/W
0.15
K/W
IXTR 30N25
ISOPLUS 247 OUTLINE
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
I
S
VGS = 0 V
ISM Repetitive; Note 1
VSD IF = IS, VGS = 0 V, Notes 2, 3
trr
QRM IF = IS, -di/dt = 100 A/µs, VR = 100 V
30 A
120 A
1.5 V
300 ns
3.0 µ C
Note: 1. Pulse width limited by TJM
2. Pulse test, t 300 µs, duty cycle d 2 %
3. IT = 15A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025

विन्यास 2 पेज
डाउनलोड[ IXTR30N25 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXTR30N25Power MOSFETIXYS
IXYS


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