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IXTR170P10P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - IXYS

भाग संख्या IXTR170P10P
समारोह Power MOSFET
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXTR170P10P?> डेटा पत्रक पीडीएफ

IXTR170P10P pdf
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs VDS = -10V, ID = - 85A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = - 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = - 85A
RG = 1(External)
Qg(on)
Qgs
Qgd
VGS = -10V, VDS = 0.5 • VDSS, ID = - 85A
RthJC
RthCS
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = - 85A, VGS = 0V, Note 1
trr IF = - 85A, -di/dt = -100A/µs
QRM
IRM
VR = - 50V, VGS = 0V
Characteristic Values
Min. Typ. Max.
35 58
S
12.6
4190
930
nF
pF
pF
32 ns
75 ns
82 ns
45 ns
240 nC
45 nC
120 nC
0.40 °C/W
0.15
°C/W
Characteristic Values
Min. Typ. Max.
-170 A
- 680 A
- 3.3 V
176
1.25
-14.2
ns
µC
A
IXTR170P10P
ISOPLUS247 (IXTR) Outline
Note 1: Pulse Test, t 300µs; Duty Cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

विन्यास 5 पेज
डाउनलोड[ IXTR170P10P Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXTR170P10PPower MOSFETIXYS
IXYS


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