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IXTN120N25 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - IXYS

भाग संख्या IXTN120N25
समारोह Power MOSFET
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXTN120N25?> डेटा पत्रक पीडीएफ

IXTN120N25 pdf
IXTK 120N25
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs VDS = 10 V; ID = 0.5 ID25, pulse test
Characteristic values
Min. Typ. Max.
65 98
S
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
7700
1700
600
pF
pF
pF
td(on)
35 ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
38
ns
td(off) RG = 1.5 (External)
175 ns
tf 35 ns
Qg(on)
Qgs
Qgd
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
360
63
180
nC
nC
nC
RthJC
RthCK
0.15
0.17 K/W
K/W
Source-Drain Diode
Symbol Test Conditions
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
IS VGS = 0V
120 A
ISM Repetitive; pulse width limited by TJM
480 A
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
1.5 V
trr IF = 25A, -di/dt = 100 A/µs, VR = 100V
Qrr
350 ns
4 µC
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021
1.020
.033
1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
IXYS reserves the right to change limits, test conditions, and dimensions.
5,486,715
5,381,025
6,306,728B1

विन्यास 5 पेज
डाउनलोड[ IXTN120N25 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXTN120N25Power MOSFETIXYS
IXYS


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