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NTE68 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Complementary Transistors - NTE

भाग संख्या NTE68
समारोह Silicon Complementary Transistors
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
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<?=NTE68?> डेटा पत्रक पीडीएफ

NTE68 pdf
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Second Breakdown
VCEO(sus) IC = 100mA, IB = 0, Note 3
ICEX VCE = 250V, VBE(off) = 1.5V
ICEO VCE = 200V, IB = 0
IEBO VEB = 5V, IC = 0
Second Breakdown Collector Current
with Base Forward Bias
ON Characteristics
IS/b VCE = 50V, t = 0.5s (nonrepetitive)
VCE = 80V, t = 0.5s (nonrepetitive)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter On Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(on)
VCE = 4V, IC = 8A
VCE = 4V, IC = 16A
IC = 8A, IB = 800mA
IC = 16A, IB = 3.2A
VCE = 4V, IC = 8A
Current GainBandwidth Product
Output Capacitance
fT VCE = 10V, IC = 1A, ftest = 1MHz
Cob VCB = 10V, IE = 0, ftest = 1MHz
Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle 2%.
Min Typ Max Unit
250 – – V
– – 250 µA
– – 500 µA
– – 500 µA
5 – – µA
2 – – µA
15 60
5––
– – 1.4 V
– – 4.0 V
2.2 V
4 – – MHz
– – 500 pF
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
.215 (5.45)
.430
(10.92)
1.187
(30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case

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डाउनलोड[ NTE68 Datasheet.PDF ]


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