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NTE61 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Complementary Transistors - NTE

भाग संख्या NTE61
समारोह Silicon Complementary Transistors
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
1 Page
		
<?=NTE61?> डेटा पत्रक पीडीएफ

NTE61 pdf
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Second Breakdown
Second Breakdown Collector Current
with Base Forward Bias
ON Characteristics
IS/b VCE = 50V, t = 1s (nonrepetitive)
VCE = 100V, t = 1s (nonrepetitive)
5
1
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter On Voltage
hFE
VCE(sat)
VBE(on)
VCE = 2V, IC = 5A
IC = 5A, IB = 500mA
VCE = 2V, IC = 5A
25
Dynamic Characteristics
Current GainBandwidth Product
Output Capacitance
fT VCE = 10V, IC = 500mA, ftest = 0.5MHz
Cob VCB = 10V, IE = 0, ftest = 1MHz
2
Typ Max Unit
– – µA
– – µA
150
1V
2V
– – MHz
1000 pF
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
1.187 (30.16)
.215 (5.45)
.430
(10.92)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case

विन्यास 2 पेज
डाउनलोड[ NTE61 Datasheet.PDF ]


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